杨伟煌，博士。

受教育与工作经历：

1. 2002.09-2006.06 厦门大学 本科 物理学
2. 2006.09-2013.06 厦门大学 博士 凝聚态物理（导师：康俊勇 教授）
3. 2013.10-2016.12 新加坡南洋理工大学 博士后
4. 2017.05-至今 杭州电子科技大学 副研究员/li>

研究方向：

1. 二维层状材料的外延生长和特性研究及其光电器件研制
2. 新型二维材料柔性微纳传感器制备技术
3. 高Al组分AlGaN量子阱紫外发光二极管

科研项目：

1. 国家自然科学基金青年项目：二维过渡金属硫族化合物能谷极化特性调控及其旋光发光二极管研制，25万元，杨伟煌，61704040，2018.01-2020.12。
2. 浙江省自然科学基金公益技术研究计划 ：二维过渡金属硫化物柔性气体传感器制备及其机理和气敏特性研究 ，10万元，杨伟煌，LGG19F040003，2019.1-2021.12。

电子邮箱

yangwh@hdu.edu.cn

期刊论文：

1. W. Yang, J. Shang, J. Wang, X. Shen, B. Cao, N. Peimyoo, C. Zou, Y. Chen, Y. Wang, C. Cong, W. Huang, and T. Yu. “Electrically Tunable Valley-Light Emitting Diode (vLED) Based on CVD-Grown Monolayer WS2”. Nano Letters, 16(3), 1560-1567, 2016.
2. W. H. Yang, J. C. Li, Y. Zhang, P. K Huang, T. C. Lu, H. C. Kuo, S. P. Li, X. Yang, H. Y. Chen, D. Y. Liu, and J. Y. Kang. “High density GaN/AlN quantum dots for deep UV LED with high quantum efficiency and temperature stability”. Scientific Reports, 4(5), 5166, 2014.
3. W. H. Yang, J. C. Li, W. Lin, S. P. Li, H. Y. Chen, D. Y. Liu, X. Yang, and J. Y. Kang. “Control of two-dimensional growth of AlN and high Al-content AlGaN-based MQWs for deep-UV LEDs”. AIP Advances, 3(5), 052103, 2013.
4. W. H. Yang, S. P. Li, H. Y. Chen, D. Y. Liu, and J. Y. Kang. “Origins and suppressions of parasitic emissions in ultraviolet light-emitting diode structures”. Journal of Materials Research, 25(6), 1037-1040, 2010.
5. N. Peimyoo, W. Yang, J. Shang, X. Shen, Y. Wang, and T. Yu. “Chemically driven tunable light emission of charged and neutral excitons in monolayer WS2”. ACS Nano, 8(11), 11320-11329, 2014.
6. C. Zhou, W. Yang, and H. Zhu. “Mechanism of charge transfer and its impacts on Fermi-level pinning for gas molecules adsorbed on monolayer WS2”. The Journal of Chemical Physics, 142, 214704, 2015.
7. C. J. Zhou, W. H. Yang, Y. P. Wu, W. Lin and H. L. Zhu. “Theoretical study of the interaction of electron donor and acceptor molecules with monolayer WS2”. Journal of Physics D: Applied Physics, 48, 285303, 2015.
8. H. L. Zhu, W. H. Yang, Y. P. Wu, W. Lin, J. Y. Kang, and C. J. Zhou. “Au and Ti induced charge redistributions on monolayer WS2”. Chinese Physics B, 24(7), 077301, 2015.
9. Y. Wang, C. Cong, W. Yang, J. Shang, N. Peimyoo, Y. Chen, J. Kang, J. Wang, W. Huang, and T. Yu. “Strain-induced direct–indirect bandgap transition and phonon modulation in monolayer WS2”. Nano Research, 8(8), 2562-2572, 2015.
10. N. Peimyoo, J. Shang, W. Yang, Y. Wang, C. Cong, and T. Yu. “Thermal conductivity determination of suspended mono- and bilayer WS2 by Raman spectroscopy”. Nano Research, 8(4), 1210-1221, 2014.
11. C. Zhou, H. Zhu, W. Yang, Y. Wu, and W. Lin. “Metal-atom-induced charge redistributions and their effects on the electrical contacts to WS2 monolayers”. Physica Status Solidi B, 252(8), 1783-1791, 2015.
12. Q. Zhuang, W. Lin, W. Yang, W. Yang, C. Huang, J. Li, H. Chen, S. Li, and J. Kang. “Defect Suppression in AlN Epilayer Using Hierarchical Growth Units”. The Journal of Physical Chemistry C, 117(27), 14158-14164, 2013.
13. Y. Wang, C. Cong, R. Fei, W. Yang, Y. Chen, B. Cao, L. Yang, and T. Yu*. Remarkable anisotropic phonon response in uniaxially strained few-layer black phosphorus. Nano Research, 8(12), 3944-3953, 2015.
14. H. Zhu, C. Zhou, X. Wang, X. Chen, W. Yang, Y. Wu, and W. Lin. “Doping behaviors of adatoms adsorbed on phosphorene”. Physica Status Solidi B., 253(6), 1156-1166, 2016.
15. X. Shen, C. Qiu, B. Cao, C. Cong, W. Yang, H. Wang, and T. Yu. “Electrical field tuning of magneto-Raman scattering in monolayer graphene”. Nano Research, 8(4), 1139-1147, 2015.
16. B. Cao, X. Shen, J. Shang, C. Cong, W. Yang, M. Eginligil, and T. Yu. “Low temperature photoresponse of monolayer tungsten disulphide”. APL Materials, 2(11), 116101, 2014.
17. T. C. Zheng, W. Lin, D. J. Cai, W. H. Yang, W. Jiang, H. Y. Chen, J. C. Li, S. P. Li, and J. Y. Kang. “High Mg effective incorporation in Al-rich AlxGa1-xN by periodic repetition of ultimate V/III ratio conditions”. Nanoscale Research Letters, 9(1), 40, 2014.
18. K. Y. Li, W. Y. Wang, Z. H. Chen, N. Gao, W. H. Yang, W. Li, H. Y. Chen, S. P. Li, H. Li, P. Jin, and J. Y. Kang. “Vacuum Rabi splitting of exciton–polariton emission in an AlN film”. Scientific Reports, 3(3), 3551, 2013.
19. J. C. Li, W. H. Yang, S. P. Li, H. Y. Chen, D. Y. Liu, and J. Y. Kang. “Enhancement of p-type conductivity by modifying the internal electric field in Mg- and Si--codoped AlxGa1-xN/AlyGa1-yN superlattices”. Applied Physics Letters, 95(15), 151113, 2009.
20. J. C. Li, W. Lin, W. H. Yang, W. Z. Cai, Q. F. Pan, X. J. Lin, S. P. Li, H. Y. Chen, D. Y. Liu, J. F. Cai, X. Yu, and J. Y. Kang. “Design and epitaxy of structural III-nitrides”. Journal of Crystal Growth, 311(3), 478-481, 2009.
21. J. J. Zheng, Z. M. Wu, W. H. Yang, S. P. Li, and J. Y. Kang. “Growth and characterization of type II ZnO/ZnSe core/shell nanowire arrays”. Journal of Materials Research, 25(7), 1272-1277, 2010.
22. L. W. Sang, Z. X. Qin, H. Fang, Y. Z. Zhang, T. Li, Z. Y. Xu, Z. J. Yang, B. Shen, G. Y. Zhang, S. P. Li, W. H. Yang, H. Y. Chen, D. Y. Liu, and J. Y. Kang. “AlGaN-based deep-ultraviolet light emitting diodes fabricated on AlN/sapphire template”. Chinese Physics Letters, 26(11), 117801, 2009.

授权专利：

1. 康俊勇，李金钗，李书平，杨伟煌，陈航洋，刘达艺，选择超晶格位置掺杂的p型III族氮化物材料的制备方法，专利号：200810071176.0

2017年12月更新